WP6: Novel high voltage and resistive CMOS sensors

Objectives

  •   Perform TCAD process simulations and Geant4 simulations for test structures and sensor prototypes for different CMOS processes to optimise sensor design
  •   Prepare designs for MPWR submissions exploring different foundries
  •   Characterise test-structures and sensors using electrical measurements, lasers, sources and test beams
  •   Perform basic R&D on capacitive interconnection
  •   Deliver full assemblies to all participating projects

Tasks:

  • Task 6.1 Scientific coordination
  • Task 6.2 Simulation
  • Task 6.3 Sensor development
  • Task 6.4 Hybridisation

Deliverables

Del. no. Deliverable name WP no. Planned delivery date Actual delivery date Status  Comments
D6.1 TCAD libraries 6 M40      
D6.2 Sensor-design guidelines 6 M46      
D6.3 Performance characterisation results 6 M46      
D6.4 Radiation tolerance assessment 6 M46      
D6.5 Optimised interconnection process 6 M12 M42 Delayed Justification for delay
D6.6 Assemblies delivered 6 M40      
D6.7 Recommendation for industrialisation 6 M46      
D6.8 Final report on HV/ HR CMOS devices 6 M46      

Milestones

Mil. no. Milestone name WP no. Planned delivery date Actual delivery date Status Comments
MS7 Simulation workshop on HV/HR-CMOS TCAD and Geant4 simulations 6 M6 26/05/2016 Achieved

Justification for delay

Report

MS11 MPWR submission 6 M12 03/06/2016 Achieved Report
MS26 First test beam campaign with initial sensor prototype assemblies 6 M16 21/12/2016 Achieved Report
MS27 First irradiation campaign with sensor prototype assemblies 6 M16 21/12/2016 Achieved Report
MS28 First functional HV/HR-CMOS assembly with capacitive interconnection 6 M16 30/09/2016 Achieved Report 
MS48 Simulation tutorial on HV/HRCMOS TCAD and Geant4 simulations 6 M24 28/04/2017 Achieved Report

Publications

The list of WP6 publications can be found in CDS. 

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