WP6: Novel high voltage and resistive CMOS sensors

Objectives

Perform TCAD process simulations and Geant4 simulations for test structures and sensor prototypes for different CMOS processes to optimise sensor design
Prepare designs for MPWR submissions exploring different foundries
Characterise test-structures and sensors using electrical measurements, lasers, sources and test beams
Perform basic R&D on capacitive interconnection
Deliver full assemblies to all participating projects

Tasks:

Task 6.1 Scientific coordination
Task 6.2 Simulation
Task 6.3 Sensor development
Task 6.4 Hybridisation

Deliverables

Del. no.	Deliverable name	WP no.	Planned delivery date	Actual delivery date	Status	Comments
D6.5	Optimised interconnection process	6	M42	13/05/2019	Achieved	Report Justification for delay
D6.6	Assemblies delivered	6	M40	31/08/2018	Achieved	Report
D6.1	TCAD libraries	6	M40	30/09/2018	Achieved	Report
D6.2	Sensor-design guidelines	6	M46	02/04/2019	Achieved	Report
D6.7	Recommendation for industrialisation	6	M46	22/03/2019	Achieved	Report
D6.3	Performance characterisation results	6	M58	20/04/2020	Achieved	Report
D6.4	Radiation tolerance assessment	6	M58	25/03/2020	Achieved	Report
D6.8	Final report on HV/ HR CMOS devices	6	M58	20/04/2020	Achieved	Report

Milestones

Mil. no.	Milestone name	WP no.	Planned delivery date	Actual delivery date	Status	Comments
MS7	Simulation workshop on HV/HR-CMOS TCAD and Geant4 simulations	6	M6	26/05/2016	Achieved	Justification for delay Report
MS11	MPWR submission	6	M12	03/06/2016	Achieved	Report
MS26	First test beam campaign with initial sensor prototype assemblies	6	M16	21/12/2016	Achieved	Report
MS27	First irradiation campaign with sensor prototype assemblies	6	M16	21/12/2016	Achieved	Report
MS28	First functional HV/HR-CMOS assembly with capacitive interconnection	6	M16	30/09/2016	Achieved	Report
MS48	Simulation tutorial on HV/HRCMOS TCAD and Geant4 simulations	6	M24	28/04/2017	Achieved	Report

Publications

The list of WP6 publications can be found in CDS.

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